IXGT32N90B2

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Power - Max :

300W

Voltage - Collector Emitter Breakdown (Max) :

900V

Test Condition :

720V, 32A, 5Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 32A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

Number of Terminals :

2

Max Operating Temperature :

150°C

Supplier Device Package :

TO-268

Collector Current-Max (IC) :

64 A

Weight :

4.500005g

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

8 Weeks

Base Part Number :

IXG*32N90

Maximum Operating Temperature :

+ 150 C

Case Connection :

COLLECTOR

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Input Type :

Standard

Td (on/off) @ 25°C :

20ns/260ns

Reach Compliance Code :

not_compliant

Mounting Style :

SMD/SMT

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXGT32

Collector Emitter Breakdown Voltage :

900V

Collector Emitter Voltage (VCEO) :

900V

Max Collector Current :

64A

Surface Mount :

yes

Minimum Operating Temperature :

- 55 C

Switching Energy :

2.6mJ (off)

Terminal Form :

Gull wing

Max Power Dissipation :

300W

Current - Collector Pulsed (Icm) :

200A

JESD-609 Code :

e3

Package Shape :

RECTANGULAR

Configuration :

Single

Pin Count :

4

Manufacturer :

IXYS

Terminal Position :

Single

Brand :

IXYS

Package :

Tube

Packaging :

Tube

Mounting Type :

Surface Mount

Width :

14 mm

Published :

2006

IGBT Type :

PT

Technology :

Si

Current - Collector (Ic) (Max) :

64A

Min Operating Temperature :

-55°C

Product Category :

IGBT Transistors

Gate Charge :

89nC

Element Configuration :

Single

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Subcategory :

IGBTs

Height :

5.1 mm

Series :

HiPerFAST™

Length :

16.05 mm

JEDEC-95 Code :

TO-268AA

Product Status :

Active

Continuous Collector Current :

64 A

Collector-Emitter Voltage-Max :

900 V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Collector Emitter Saturation Voltage :

2.7V

Number of Elements :

1

Product Type :

IGBT Transistors