IXGT32N120A3
- Mfr.Part #
- IXGT32N120A3
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- IGBT 1200V 75A 300W TO268
- Stock
- 99
- In Stock :
- 99
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Td (on/off) @ 25°C :
- --
- Collector Emitter Saturation Voltage :
- 1.2kV
- Package Shape :
- RECTANGULAR
- Power Dissipation :
- 300W
- Base Product Number :
- IXGT32
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Configuration :
- Single
- Number of Terminations :
- 2
- Minimum Operating Temperature :
- - 55 C
- Product :
- IGBT Silicon Modules
- Collector Emitter Voltage (VCEO) :
- 2.35V
- Supplier Device Package :
- TO-268
- Pin Count :
- 4
- Terminal Finish :
- PURE TIN
- Published :
- 2011
- Collector Current-Max (IC) :
- 75 A
- Max Collector Current :
- 75A
- Element Configuration :
- Single
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Tradename :
- GenX3
- Product Category :
- IGBT Modules
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- RoHS :
- Details
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Case Connection :
- COLLECTOR
- Mounting Style :
- SMD/SMT
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- IGBT Type :
- PT
- JEDEC-95 Code :
- TO-268AA
- Manufacturer :
- IXYS
- Product Type :
- IGBT Modules
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Time :
- 239 ns
- Current - Collector (Ic) (Max) :
- 75A
- Brand :
- IXYS
- Input Type :
- Standard
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Product Status :
- Active
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge :
- 89nC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300W
- Power - Max :
- 300W
- Gate-Emitter Thr Voltage-Max :
- 5V
- Test Condition :
- --
- Switching Energy :
- --
- Height :
- 5.1 mm
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminals :
- 2
- Collector-Emitter Voltage-Max :
- 1200 V
- Factory Lead Time :
- 26 Weeks
- Power Dissipation-Max (Abs) :
- 300 W
- Terminal Position :
- Single
- Gate-Emitter Voltage-Max :
- 20V
- Series :
- GenX3™
- Transistor Application :
- POWER CONTROL
- JESD-609 Code :
- e3
- Length :
- 14 mm
- Terminal Form :
- Gull wing
- Current - Collector Pulsed (Icm) :
- 230A
- Package :
- Tube
- Vce(on) (Max) @ Vge, Ic :
- 2.35V @ 15V, 32A
- Mount :
- Surface Mount
- Turn Off Time-Nom (toff) :
- 1380 ns
- Maximum Operating Temperature :
- + 150 C
- Width :
- 16.05 mm
- Datasheets
- IXGT32N120A3

IXGT32N120A3 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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