IXFJ40N30
- Mfr.Part #
- IXFJ40N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 40A TO268
- Stock
- 32,053
- In Stock :
- 32,053
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 300W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Published :
- 2000
- Number of Terminals :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 40 A
- Series :
- HiPerFET™
- Turn-Off Delay Time :
- 75 ns
- Lead Free :
- Lead Free
- Resistance :
- 80mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Supplier Device Package :
- TO-268
- Package Shape :
- RECTANGULAR
- JESD-609 Code :
- e3
- Power Dissipation (Max) :
- 300W (Tc)
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3, Short Tab
- Pin Count :
- 4
- Power Dissipation-Max (Abs) :
- 300 W
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 20A, 10V
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 300V
- Surface Mount :
- No
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 300W
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Drain to Source Voltage (Vdss) :
- 300V
- Fall Time (Typ) :
- 45 ns
- Number of Elements :
- 1
- Package :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Product Status :
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Rise Time :
- 60ns
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 300 V
- Manufacturer :
- IXYS Corporation
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- TO-268AA
- Continuous Drain Current (ID) :
- 40A
- Terminal Form :
- THROUGH-HOLE
- Drain-source On Resistance-Max :
- 0.085 Ω
- Pbfree Code :
- yes
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 160A
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXFJ40
- JESD-30 Code :
- R-PSIP-T3
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Datasheets
- IXFJ40N30
N-Channel Tube 80m Ω @ 20A, 10V ±20V 4800pF @ 25V 200nC @ 10V 300V TO-220-3, Short Tab
IXFJ40N30 Overview
A device's maximal input capacitance is 4800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 40A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 300V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 40 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 160A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFJ40N30 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 160A.
a 300V drain to source voltage (Vdss)
IXFJ40N30 Applications
There are a lot of IXYS
IXFJ40N30 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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