IXFJ40N30

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Mfr.Part #
IXFJ40N30
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 300V 40A TO268
Stock
32,053
In Stock :
32,053

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
300W Tc
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Published :
2000
Number of Terminals :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
40 A
Series :
HiPerFET™
Turn-Off Delay Time :
75 ns
Lead Free :
Lead Free
Resistance :
80mOhm
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
3
Mount :
Through Hole
Supplier Device Package :
TO-268
Package Shape :
RECTANGULAR
JESD-609 Code :
e3
Power Dissipation (Max) :
300W (Tc)
Terminal Position :
Single
ECCN Code :
EAR99
Element Configuration :
Single
Mounting Type :
Through Hole
Package / Case :
TO-220-3, Short Tab
Pin Count :
4
Power Dissipation-Max (Abs) :
300 W
Rds On (Max) @ Id, Vgs :
80m Ω @ 20A, 10V
Additional Feature :
AVALANCHE RATED
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
FET Type :
N-Channel
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
300V
Surface Mount :
No
Vgs (Max) :
±20V
Power Dissipation :
300W
Vgs(th) (Max) @ Id :
4V @ 4mA
Drain to Source Voltage (Vdss) :
300V
Fall Time (Typ) :
45 ns
Number of Elements :
1
Package :
Tube
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Product Status :
Obsolete
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Rise Time :
60ns
FET Feature :
--
DS Breakdown Voltage-Min :
300 V
Manufacturer :
IXYS Corporation
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
JEDEC-95 Code :
TO-268AA
Continuous Drain Current (ID) :
40A
Terminal Form :
THROUGH-HOLE
Drain-source On Resistance-Max :
0.085 Ω
Pbfree Code :
yes
Packaging :
Tube
RoHS Status :
RoHS Compliant
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
160A
Reach Compliance Code :
Compliant
Base Product Number :
IXFJ40
JESD-30 Code :
R-PSIP-T3
Terminal Finish :
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Datasheets
IXFJ40N30
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFJ40N30 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Short Tab, Operating Temperature:-55°C~150°C TJ, IXFJ40N30 pinout, IXFJ40N30 datasheet PDF, IXFJ40N30 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFJ40N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFJ40N30


N-Channel Tube 80m Ω @ 20A, 10V ±20V 4800pF @ 25V 200nC @ 10V 300V TO-220-3, Short Tab

IXFJ40N30 Overview


A device's maximal input capacitance is 4800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 40A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 300V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 40 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 160A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFJ40N30 Features


a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 160A.
a 300V drain to source voltage (Vdss)


IXFJ40N30 Applications


There are a lot of IXYS
IXFJ40N30 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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