IXFJ32N50Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

JEDEC-95 Code :

TO-268AA

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

FET Type :

N-Channel

Number of Terminations :

3

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

32A

Case Connection :

DRAIN

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max (Abs) :

360 W

Pin Count :

4

Element Configuration :

Single

JESD-609 Code :

e3

Package Shape :

RECTANGULAR

Vgs(th) (Max) @ Id :

4V @ 4mA

DS Breakdown Voltage-Min :

500 V

Drain to Source Voltage (Vdss) :

500V

Fall Time (Typ) :

20 ns

Package / Case :

TO-220-3, Short Tab

Power Dissipation :

360W

FET Feature :

--

Drain-source On Resistance-Max :

0.15Ohm

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

1500 mJ

Vgs (Max) :

±20V

Number of Elements :

1

Product Status :

Obsolete

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Drain Current-Max (Abs) (ID) :

32 A

Published :

2000

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

75 ns

Manufacturer :

IXYS Corporation

Input Capacitance (Ciss) (Max) @ Vds :

3950pF @ 25V

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Series :

HiPerFET™

Mount :

Through Hole

Power Dissipation (Max) :

360W (Tc)

Rise Time :

42ns

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

150m Ω @ 16A, 10V

Drain to Source Breakdown Voltage :

500V

Terminal Finish :

Matte Tin (Sn)

Supplier Device Package :

TO-268

Base Product Number :

IXFJ32

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Tube

Packaging :

Tube

Power Dissipation-Max :

360W Tc

Terminal Position :

Single

Number of Terminals :

3

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

128A

Polarity/Channel Type :

N-Channel