IXFJ32N50Q
- Mfr.Part #
- IXFJ32N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 32A TO268
- Stock
- 20,232
- In Stock :
- 20,232
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 16A, 10V
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- TO-220-3, Short Tab
- Power Dissipation (Max) :
- 360W (Tc)
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 32 A
- Surface Mount :
- No
- Power Dissipation-Max :
- 360W Tc
- Packaging :
- Tube
- Manufacturer :
- IXYS Corporation
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-268AA
- Mounting Type :
- Through Hole
- Package :
- Tube
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 360W
- Gate to Source Voltage (Vgs) :
- 20V
- Additional Feature :
- AVALANCHE RATED
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminals :
- 3
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 20 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Rise Time :
- 42ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- THROUGH-HOLE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.15Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Base Product Number :
- IXFJ32
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3950pF @ 25V
- Supplier Device Package :
- TO-268
- Turn-Off Delay Time :
- 75 ns
- Published :
- 2000
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- RoHS Status :
- RoHS Compliant
- Series :
- HiPerFET™
- Drain to Source Breakdown Voltage :
- 500V
- Pin Count :
- 4
- Product Status :
- Obsolete
- DS Breakdown Voltage-Min :
- 500 V
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Application :
- SWITCHING
- Power Dissipation-Max (Abs) :
- 360 W
- Pulsed Drain Current-Max (IDM) :
- 128A
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 153nC @ 10V
- JESD-30 Code :
- R-PSIP-T3
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 32A
- Datasheets
- IXFJ32N50Q

N-Channel Tube 150m Ω @ 16A, 10V ±20V 3950pF @ 25V 153nC @ 10V 500V TO-220-3, Short Tab
IXFJ32N50Q Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3950pF @ 25V.This device has a continuous drain current (ID) of [32A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 32 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 128A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFJ32N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 128A.
a 500V drain to source voltage (Vdss)
IXFJ32N50Q Applications
There are a lot of IXYS
IXFJ32N50Q applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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