IXFJ32N50Q
- Mfr.Part #
- IXFJ32N50Q
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 32A TO268
- Stock
- 20,232
- In Stock :
- 20,232
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-268AA
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 153nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 32 A
- FET Feature :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.15Ohm
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 75 ns
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 20 ns
- Rise Time :
- 42ns
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 3950pF @ 25V
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Breakdown Voltage :
- 500V
- Published :
- 2000
- Continuous Drain Current (ID) :
- 32A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 360W Tc
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3, Short Tab
- Number of Terminations :
- 3
- DS Breakdown Voltage-Min :
- 500 V
- Surface Mount :
- No
- Power Dissipation :
- 360W
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 360W (Tc)
- Drain to Source Voltage (Vdss) :
- 500V
- Series :
- HiPerFET™
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 128A
- Manufacturer :
- IXYS Corporation
- Power Dissipation-Max (Abs) :
- 360 W
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 16A, 10V
- Supplier Device Package :
- TO-268
- Package :
- Tube
- Pin Count :
- 4
- Terminal Form :
- THROUGH-HOLE
- JESD-30 Code :
- R-PSIP-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Product Status :
- Obsolete
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- RoHS Status :
- RoHS Compliant
- Base Product Number :
- IXFJ32
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- JESD-609 Code :
- e3
- Datasheets
- IXFJ32N50Q

N-Channel Tube 150m Ω @ 16A, 10V ±20V 3950pF @ 25V 153nC @ 10V 500V TO-220-3, Short Tab
IXFJ32N50Q Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3950pF @ 25V.This device has a continuous drain current (ID) of [32A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.A device's drain current is its maximum continuous current, and this device's drain current is 32 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 128A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFJ32N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 128A.
a 500V drain to source voltage (Vdss)
IXFJ32N50Q Applications
There are a lot of IXYS
IXFJ32N50Q applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| IXFJ15N100Q | Littelfuse | 43,811 | MOSFET N-CH TO-220 |
| IXFJ20N85X | Littelfuse | 26,190 | MOSFET N-CH 850V 9.5A ISO TO247 |
| IXFJ26N50P3 | Littelfuse | 2 | MOSFET N-CH 500V 14A TO247 |
| IXFJ32N50 | Littelfuse | 36,367 | MOSFET N-CH TO-220 |
| IXFJ40N30 | Littelfuse | 32,053 | MOSFET N-CH 300V 40A TO268 |
| IXFJ40N30Q | Littelfuse | 3,256 | MOSFET N-CHANNEL 300V 40A TO268 |
| IXFJ52N30Q | Littelfuse | 36,554 | MOSFET N-CH TO-220 |
| IXFJ80N10Q | Littelfuse | 16,343 | MOSFET N-CH TO-220 |
| IXFJ80N20Q | Littelfuse | 9,325 | MOSFET N-CH TO-220 |
| IXFJ80N25X3 | Littelfuse | 1 | MOSFET N-CH 250V 44A ISO TO247-3 |
















