IXBX25N250

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Height :

21.34 mm

Lead Free :

Lead Free

Mount :

Through Hole

Product Category :

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max) :

2500V

Pin Count :

3

Gate-Emitter Voltage-Max :

20V

Input Type :

Standard

Length :

16.13 mm

Transistor Application :

POWER CONTROL

Qualification Status :

Not Qualified

Vce(on) (Max) @ Vge, Ic :

3.3V @ 15V, 25A

Terminal Finish :

TIN SILVER COPPER

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Number of Terminations :

3

Mounting Style :

Through Hole

Turn Off Time-Nom (toff) :

650 ns

Max Collector Current :

55A

Brand :

IXYS

Power - Max :

300W

RoHS :

Compliant

Turn On Time :

694 ns

Packaging :

Tube

IGBT Type :

--

Product Status :

Active

Maximum Operating Temperature :

+ 150 C

Additional Feature :

LOW CONDUCTION LOSS

Manufacturer :

IXYS

Technology :

Si

Width :

5.21 mm

Terminal Position :

Single

Minimum Operating Temperature :

- 55 C

Factory Lead Time :

28 Weeks

Collector Emitter Breakdown Voltage :

2.5kV

Pbfree Code :

yes

Case Connection :

COLLECTOR

Td (on/off) @ 25°C :

--

Reverse Recovery Time :

1.6 μs

Product Type :

IGBT Transistors

Current - Collector (Ic) (Max) :

55A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

PLUS247™-3

JESD-609 Code :

e1

Reach Compliance Code :

Unknown

Max Power Dissipation :

300W

Gate Charge :

103nC

Tradename :

BIMOSFET

Current - Collector Pulsed (Icm) :

180A

Package / Case :

TO-247-3

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXBX25

Series :

BIMOSFET™

Published :

2010

Collector Emitter Voltage (VCEO) :

3.3V

Test Condition :

--

Switching Energy :

--

Reverse Recovery Time (trr) :

1.6μs

Gate-Emitter Thr Voltage-Max :

5V

Transistor Element Material :

SILICON