IXBR42N170
- Mfr.Part #
- IXBR42N170
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- IGBT 1700V 57A 200W ISOPLUS247
- Stock
- 11,641
- In Stock :
- 11,641
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Td (on/off) @ 25°C :
- --
- Base Product Number :
- IXBR42
- JESD-609 Code :
- e1
- RoHS :
- Details
- Reverse Recovery Time (trr) :
- 1.32μs
- Terminal Position :
- Single
- Manufacturer :
- IXYS
- Test Condition :
- --
- Switching Energy :
- --
- Power Dissipation-Max (Abs) :
- 200 W
- Additional Feature :
- UL RECOGNIZED
- Technology :
- Si
- Series :
- BIMOSFET™
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 200W
- Collector Emitter Voltage (VCEO) :
- 2.9V
- Max Collector Current :
- 57A
- Tradename :
- BIMOSFET
- Polarity/Channel Type :
- N-Channel
- Product Category :
- IGBT Transistors
- Current - Collector Pulsed (Icm) :
- 300A
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Factory Lead Time :
- 32 Weeks
- Pbfree Code :
- yes
- Supplier Device Package :
- ISOPLUS247™
- Transistor Application :
- POWER CONTROL
- Input Type :
- Standard
- Mount :
- Through Hole
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- RoHS Status :
- ROHS3 Compliant
- Gate-Emitter Voltage-Max :
- 20V
- Reverse Recovery Time :
- 1.32 μs
- Number of Terminals :
- 3
- Collector Emitter Breakdown Voltage :
- 1.7kV
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power - Max :
- 200W
- Number of Terminations :
- 3
- Terminal Form :
- THROUGH-HOLE
- Voltage - Collector Emitter Breakdown (Max) :
- 1700V
- Package / Case :
- ISOPLUS247™
- Product Type :
- IGBT Transistors
- Vce(on) (Max) @ Vge, Ic :
- 2.9V @ 15V, 42A
- Collector Current-Max (IC) :
- 57 A
- Product Status :
- Active
- Qualification Status :
- Not Qualified
- Mounting Style :
- Through Hole
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Terminal Finish :
- TIN SILVER COPPER
- Turn Off Time-Nom (toff) :
- 1070 ns
- Base Part Number :
- IXB*42N170
- Mounting Type :
- Through Hole
- Collector-Emitter Voltage-Max :
- 1700 V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Reach Compliance Code :
- Unknown
- Turn On Time :
- 224 ns
- Pin Count :
- 247
- Surface Mount :
- No
- Published :
- 2008
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 57A
- IGBT Type :
- --
- Gate Charge :
- 188nC
- Datasheets
- IXBR42N170

IXBR42N170 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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