IXBK55N300

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Lead Free :

Lead Free

Configuration :

Single

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSFM-T3

Max Power Dissipation :

625W

Terminal Form :

THROUGH-HOLE

Product Type :

IGBT Transistors

Reverse Recovery Time (trr) :

1.9µs

Additional Feature :

LOW CONDUCTION LOSS

Input Type :

Standard

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-264-3, TO-264AA

Power Dissipation-Max (Abs) :

625 W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Surface Mount :

No

Td (on/off) @ 25°C :

--

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

26.59 mm

Base Product Number :

IXBK55

Test Condition :

--

Length :

20.29 mm

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

3kV

Collector Current-Max (IC) :

130 A

Case Connection :

COLLECTOR

Pin Count :

3

Number of Terminations :

3

Series :

BIMOSFET™

Turn On Time :

637 ns

Voltage - Collector Emitter Breakdown (Max) :

3000V

Radiation Hardening :

No

Product Category :

IGBT Transistors

Current - Collector Pulsed (Icm) :

600A

Collector-Emitter Voltage-Max :

3000 V

Power - Max :

625W

JEDEC-95 Code :

TO-264AA

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Max Collector Current :

130A

Technology :

Si

Current - Collector (Ic) (Max) :

130A

RoHS :

Details

Number of Elements :

1

Product Status :

Active

Gate-Emitter Thr Voltage-Max :

5V

Manufacturer :

IXYS

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

TO-264

Mounting Type :

Through Hole

Number of Terminals :

3

Maximum Operating Temperature :

+ 150 C

Brand :

IXYS

Gate Charge :

335nC

Vce(on) (Max) @ Vge, Ic :

3.2V @ 15V, 55A

Package :

Tube

Package Shape :

RECTANGULAR

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e1

Collector Emitter Voltage (VCEO) :

3.2V

Gate-Emitter Voltage-Max :

25V

Reach Compliance Code :

Compliant

Factory Lead Time :

28 Weeks

Transistor Element Material :

SILICON

Tradename :

BIMOSFET

Transistor Application :

POWER CONTROL

Switching Energy :

--

Mount :

Through Hole

Turn Off Time-Nom (toff) :

475 ns

Published :

2009

Packaging :

Tube

Width :

5.31 mm

Polarity/Channel Type :

N-Channel

IGBT Type :

--

Reverse Recovery Time :

1.9 μs