ISL9V3040D3STV
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- Mfr.Part #
- ISL9V3040D3STV
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- ECOSPARK1 IGN IGBT TO252
- Stock
- 2,248
- In Stock ：
- 2,248
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Reverse Recovery Time :
- 2.1μs
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Type :
- Logic
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Current - Collector (Ic) (Max) :
- 21A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Td (on/off) @ 25°C :
- 700ns/4.8μs
- Test Condition :
- 300V, 6.5A, 470 Ω, 5V
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- Factory Lead Time :
- 6 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 150W
- Gate Charge :
- 17nC
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101, EcoSPARK®
- Vce(on) (Max) @ Vge, Ic :
- 1.65V @ 4V, 6A
- Datasheets
- ISL9V3040D3STV
ISL9V3040D3STV datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
ISL9V3040D3STV Description
IGBT stands for insulated-gate bipolar transistor. Figure (a) shows the symbol of an IGBT. It is a power transistor that combines an input MOS and an output bipolar transistor. Figure (b) shows an example of the IGBT structure. A P region is formed on the drain side of the MOSFET.
ISL9V3040D3STV Features
? SCIS Energy = 300 mJ at TJ = 25°C
? Logic Level Gate Drive
? This Device is Pb?Free and is RoHS Compliant
? AEC?Q101 Qualified and PPAP Capable
ISL9V3040D3STV Applications
? Automotive Ignition Coil Driver Circuits
? High Current Ignition System
? Coil on Plug Applications
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