IS62WV25616DALL-55TI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Format :

SRAM

Memory Type :

Volatile

Number of Pins :

44

Memory Size :

4Mb 256K x 16

Voltage - Supply :

1.65V~2.2V

Package / Case :

44-TSOP (0.400, 10.16mm Width)

JESD-609 Code :

e0

Terminal Pitch :

0.8mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

TIN LEAD

Number of Functions :

1

Access Time (Max) :

55 ns

Memory Width :

16

Pin Count :

44

RoHS Status :

ROHS3 Compliant

Supply Voltage-Min (Vsup) :

1.65V

Length :

18.41mm

Memory Density :

4194304 bit

HTS Code :

8542.32.00.41

ECCN Code :

3A991.B.2.A

I/O Type :

COMMON

Width :

10.16mm

Pbfree Code :

No

Qualification Status :

Not Qualified

Power Supplies :

1.8/2V

Standby Current-Max :

0.000007A

Mounting Type :

Surface Mount

Supply Current-Max :

0.015mA

Standby Voltage-Min :

1.2V

Height Seated (Max) :

1.2mm

Surface Mount :

yes

Write Cycle Time - Word, Page :

55ns

Organization :

256KX16

Number of Terminations :

44

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Max (Vsup) :

2.2V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Operating Temperature :

-40°C~85°C TA

Memory Interface :

Parallel

Output Characteristics :

3-STATE