IS62WV12816BLL-55B2LI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Density :

2 Mb

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Standby Voltage-Min :

1V

Sync/Async :

ASYNCHRONOUS

Memory Type :

Volatile

Memory Width :

16

Output Characteristics :

3-STATE

Write Cycle Time - Word, Page :

55ns

Operating Temperature :

-40°C~85°C TA

Time@Peak Reflow Temperature-Max (s) :

40

Memory Format :

SRAM

Factory Lead Time :

8 Weeks

Voltage - Supply :

2.5V~3.6V

Length :

8mm

Radiation Hardening :

No

Word Size :

16b

Supply Voltage :

3V

JESD-609 Code :

e1

Supply Voltage-Max (Vsup) :

3.6V

Memory Interface :

Parallel

Operating Supply Voltage :

3.3V

Memory Size :

2Mb 128K x 16

Access Time (Max) :

55 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

48

Address Bus Width :

17b

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Terminal Position :

BOTTOM

Terminal Pitch :

0.75mm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Terminations :

48

I/O Type :

COMMON

Number of Ports :

1

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Package / Case :

48-TFBGA

Nominal Supply Current :

3mA

Supply Voltage-Min (Vsup) :

2.5V

Packaging :

Tray

Pin Count :

48