IS43R83200B-6TL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Pitch :

0.65mm

Interleaved Burst Length :

248

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Clock Frequency :

166MHz

Write Cycle Time - Word, Page :

15ns

Supply Voltage-Min (Vsup) :

2.3V

Voltage - Supply :

2.3V~2.7V

Refresh Cycles :

8192

Access Time :

700ps

Supply Current-Max :

0.25mA

Number of Terminations :

66

Qualification Status :

Not Qualified

Number of Functions :

1

JESD-609 Code :

e3

Density :

256 Mb

Surface Mount :

yes

Length :

22.22mm

Memory Interface :

Parallel

Supply Voltage :

2.5V

Operating Temperature :

0°C~70°C TA

Standby Current-Max :

0.025A

Pin Count :

66

Number of Pins :

66

Memory Width :

8

Supply Voltage-Max (Vsup) :

2.7V

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Ports :

1

Organization :

32MX8

Height Seated (Max) :

1.2mm

Operating Mode :

SYNCHRONOUS

Data Bus Width :

8B

Memory Format :

DRAM

Output Characteristics :

3-STATE

I/O Type :

COMMON

Additional Feature :

AUTO/SELF REFRESH

Memory Type :

Volatile

RoHS Status :

RoHS Compliant

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Peak Reflow Temperature (Cel) :

260

HTS Code :

8542.32.00.24

Terminal Position :

Dual

ECCN Code :

EAR99

Operating Supply Voltage :

2.5V

Sequential Burst Length :

248

Address Bus Width :

15b

Packaging :

Tray

Memory Size :

256Mb 32M x 8