IS43DR16128B-25EBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Functions :

1

Organization :

128MX16

Write Cycle Time - Word, Page :

15ns

Additional Feature :

AUTO/SELF REFRESH

Supply Voltage-Min (Vsup) :

1.7V

Supply Voltage :

1.8V

Memory Interface :

Parallel

Qualification Status :

Not Qualified

Memory Type :

Volatile

Length :

13.5mm

Operating Mode :

SYNCHRONOUS

Number of Terminations :

84

Supply Voltage-Max (Vsup) :

1.9V

Surface Mount :

yes

Number of Ports :

1

Clock Frequency :

400MHz

Output Characteristics :

3-STATE

Voltage - Supply :

1.7V~1.9V

Number of Pins :

84

Refresh Cycles :

8192

Access Time :

400ps

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Package / Case :

84-TFBGA

Mounting Type :

Surface Mount

Operating Supply Voltage :

1.8V

Standby Current-Max :

0.03A

I/O Type :

COMMON

RoHS Status :

ROHS3 Compliant

Memory Format :

DRAM

Memory Size :

2Gb 128M x 16

Memory Width :

16

Terminal Pitch :

0.8mm

Packaging :

Tray

Interleaved Burst Length :

48

Sequential Burst Length :

48

HTS Code :

8542.32.00.36

Height Seated (Max) :

1.2mm

Address Bus Width :

14b

Operating Temperature :

-40°C~85°C TA

Density :

2 GB

Supply Current-Max :

0.54mA