IS43DR16128C-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Interleaved Burst Length :

48

Height Seated (Max) :

1.2mm

Write Cycle Time - Word, Page :

15ns

Surface Mount :

yes

Access Time :

450ps

Organization :

128MX16

Refresh Cycles :

8192

Number of Functions :

1

Power Supplies :

1.8V

Memory Size :

2Gb 128M x 16

Operating Temperature :

0°C~85°C TC

Standby Current-Max :

0.03A

Output Characteristics :

3-STATE

Memory Format :

DRAM

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

1.9V

JESD-30 Code :

R-PBGA-B84

Voltage - Supply :

1.7V~1.9V

Number of Ports :

1

Supply Voltage-Min (Vsup) :

1.7V

Clock Frequency :

333MHz

ECCN Code :

EAR99

Sequential Burst Length :

48

Length :

12.5mm

Supply Current-Max :

0.485mA

Qualification Status :

Not Qualified

Width :

8mm

Memory Density :

2147483648 bit

Additional Feature :

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

Packaging :

Tray

Terminal Pitch :

0.8mm

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

I/O Type :

COMMON

Memory Width :

16

Package / Case :

84-TFBGA

Operating Mode :

SYNCHRONOUS

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Interface :

Parallel

Supply Voltage :

1.8V

Terminal Position :

BOTTOM

Memory Type :

Volatile

Number of Terminations :

84