IS43R16800E-6TL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Output Characteristics :

3-STATE

Additional Feature :

AUTO/SELF REFRESH

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Nominal Supply Current :

220mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Height Seated (Max) :

1.2mm

Supply Voltage :

2.5V

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Factory Lead Time :

8 Weeks

Density :

128 Mb

RoHS Status :

ROHS3 Compliant

Access Time :

700ps

Interleaved Burst Length :

248

JESD-609 Code :

e3

Organization :

8MX16

Length :

22.22mm

I/O Type :

COMMON

Memory Type :

Volatile

Number of Pins :

66

Memory Interface :

Parallel

Radiation Hardening :

No

Mount :

Surface Mount

Address Bus Width :

14b

Memory Width :

16

Number of Terminations :

66

Lead Free :

Lead Free

Sequential Burst Length :

248

Operating Supply Voltage :

2.5V

Operating Temperature :

0°C~70°C TA

Packaging :

Tray

Data Bus Width :

16b

Clock Frequency :

166MHz

Memory Format :

DRAM

Terminal Pitch :

0.65mm

Write Cycle Time - Word, Page :

12ns

Refresh Cycles :

4096

Voltage - Supply :

2.3V~2.7V

Supply Voltage-Max (Vsup) :

2.7V

Number of Functions :

1

Number of Ports :

1

Standby Current-Max :

0.003A

Memory Size :

128Mb 8M x 16

Supply Voltage-Min (Vsup) :

2.3V