IS43DR16640C-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Number of Functions :

1

I/O Type :

COMMON

Interleaved Burst Length :

48

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Operating Temperature :

-40°C~85°C TA

Supply Voltage-Max (Vsup) :

1.9V

Packaging :

Tray

Additional Feature :

AUTO/SELF REFRESH

Factory Lead Time :

8 Weeks

Terminal Pitch :

0.8mm

Memory Size :

1Gb 64M x 16

Number of Ports :

1

Mounting Type :

Surface Mount

Package / Case :

84-TFBGA

Number of Pins :

84

Max Frequency :

333MHz

Output Characteristics :

3-STATE

Voltage - Supply :

1.7V~1.9V

Supply Current-Max :

0.27mA

RoHS Status :

ROHS3 Compliant

Supply Voltage :

1.8V

Lead Free :

Lead Free

Operating Supply Voltage :

1.8V

Mount :

Surface Mount

Memory Interface :

Parallel

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

TIN SILVER COPPER

Height Seated (Max) :

1.2mm

Operating Mode :

SYNCHRONOUS

Organization :

64MX16

Memory Width :

16

Memory Format :

DRAM

Refresh Cycles :

8192

Write Cycle Time - Word, Page :

15ns

Address Bus Width :

13b

Sequential Burst Length :

48

Standby Current-Max :

0.025A

Memory Type :

Volatile

Data Bus Width :

16b

JESD-609 Code :

e1

Supply Voltage-Min (Vsup) :

1.7V

Number of Terminations :

84

Density :

1 Gb

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Copper, Silver, Tin

Length :

12.5mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Access Time :

450ps