IS43DR16640C-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Operating Supply Voltage :

1.8V

Package / Case :

84-TFBGA

Interleaved Burst Length :

48

Access Time :

450ps

Data Bus Width :

16b

Terminal Position :

BOTTOM

Write Cycle Time - Word, Page :

15ns

Operating Mode :

SYNCHRONOUS

Output Characteristics :

3-STATE

Mount :

Surface Mount

Number of Functions :

1

Memory Size :

1Gb 64M x 16

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

1.9V

Max Frequency :

333MHz

Contact Plating :

Copper, Silver, Tin

Mounting Type :

Surface Mount

Address Bus Width :

13b

I/O Type :

COMMON

Refresh Cycles :

8192

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Format :

DRAM

Organization :

64MX16

Additional Feature :

AUTO/SELF REFRESH

JESD-609 Code :

e1

Number of Ports :

1

Memory Type :

Volatile

Voltage - Supply :

1.7V~1.9V

Supply Voltage :

1.8V

Height Seated (Max) :

1.2mm

Supply Current-Max :

0.27mA

Terminal Finish :

TIN SILVER COPPER

Packaging :

Tray

Supply Voltage-Min (Vsup) :

1.7V

Number of Pins :

84

Qualification Status :

Not Qualified

Memory Width :

16

Density :

1 Gb

Operating Temperature :

-40°C~85°C TA

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Pitch :

0.8mm

Length :

12.5mm

Lead Free :

Lead Free

ECCN Code :

EAR99

Memory Interface :

Parallel

Sequential Burst Length :

48

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

84

Factory Lead Time :

8 Weeks

Standby Current-Max :

0.025A