IS43DR16640B-25EBL-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Write Cycle Time - Word, Page :

15ns

JESD-30 Code :

R-PBGA-B84

Power Supplies :

1.8V

Refresh Cycles :

8192

Memory Type :

Volatile

Output Characteristics :

3-STATE

Interleaved Burst Length :

48

Memory Interface :

Parallel

I/O Type :

COMMON

Organization :

64MX16

Supply Voltage :

1.8V

Number of Terminations :

84

Standby Current-Max :

0.015A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

84-TFBGA

Operating Temperature :

0°C~70°C TA

Mounting Type :

Surface Mount

Memory Width :

16

Packaging :

Tape and Reel (TR)

Memory Density :

1073741824 bit

Sequential Burst Length :

48

Data Bus Width :

16b

Max Supply Current :

110mA

Access Time :

450ps

Memory Size :

1Gb 64M x 16

Memory Format :

DRAM

Surface Mount :

yes

Terminal Pitch :

0.8mm

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

Max Frequency :

400MHz

Qualification Status :

Not Qualified

Voltage - Supply :

1.7V~1.9V