IS43DR16320D-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Pitch :

0.8mm

Mount :

Surface Mount

Additional Feature :

PROGRAMMABLE CAS LATENCY

Interleaved Burst Length :

48

Number of Terminations :

84

Height Seated (Max) :

1.2mm

Memory Format :

DRAM

Memory Width :

16

Number of Ports :

1

Write Cycle Time - Word, Page :

15ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e1

Mounting Type :

Surface Mount

Package / Case :

84-TFBGA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Refresh Cycles :

8192

Operating Mode :

SYNCHRONOUS

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Memory Type :

Volatile

Address Bus Width :

15b

Length :

12.5mm

Density :

512 Mb

Standby Current-Max :

0.025A

Output Characteristics :

3-STATE

Qualification Status :

Not Qualified

Clock Frequency :

333MHz

Number of Functions :

1

HTS Code :

8542.32.00.28

Access Time :

450ps

RoHS Status :

ROHS3 Compliant

Memory Size :

512Mb 32M x 16

Packaging :

Tray

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Factory Lead Time :

8 Weeks

Operating Temperature :

-40°C~85°C TA

Voltage - Supply :

1.7V~1.9V

Memory Interface :

Parallel

Supply Voltage :

1.8V

Organization :

32MX16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Supply Voltage :

1.8V

Supply Voltage-Min (Vsup) :

1.7V

Supply Voltage-Max (Vsup) :

1.9V

Sequential Burst Length :

48

Number of Pins :

84

I/O Type :

COMMON

Nominal Supply Current :

230mA