IS43DR16160A-3DBL
- Mfr.Part #
- IS43DR16160A-3DBL
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 84TWBGA
- Stock
- 34,392
- In Stock :
- 34,392
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Mounting Type :
- Surface Mount
- Supply Voltage-Max (Vsup) :
- 1.9V
- Memory Size :
- 256Mb 16M x 16
- Mount :
- Surface Mount
- Output Characteristics :
- 3-STATE
- Nominal Supply Current :
- 330mA
- Operating Temperature :
- 0°C~70°C TA
- RoHS Status :
- RoHS Compliant
- Height Seated (Max) :
- 1.2mm
- ECCN Code :
- EAR99
- Pin Count :
- 84
- Length :
- 12.5mm
- Number of Ports :
- 1
- Interleaved Burst Length :
- 48
- Memory Type :
- Volatile
- Operating Supply Voltage :
- 1.8V
- Supply Voltage :
- 1.8V
- Clock Frequency :
- 333MHz
- Number of Pins :
- 84
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Organization :
- 16MX16
- Memory Width :
- 16
- Number of Terminations :
- 84
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Terminal Finish :
- TIN SILVER COPPER
- Package / Case :
- 84-TFBGA
- Additional Feature :
- AUTO/SELF REFRESH
- Memory Interface :
- Parallel
- Radiation Hardening :
- No
- HTS Code :
- 8542.32.00.24
- Density :
- 256 Mb
- Standby Current-Max :
- 0.005A
- Packaging :
- Tray
- Write Cycle Time - Word, Page :
- 15ns
- Memory Format :
- DRAM
- Terminal Position :
- BOTTOM
- Data Bus Width :
- 16b
- Number of Functions :
- 1
- Terminal Pitch :
- 0.8mm
- Access Time :
- 450ps
- Sequential Burst Length :
- 48
- Address Bus Width :
- 15b
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- I/O Type :
- COMMON
- Supply Voltage-Min (Vsup) :
- 1.7V
- Refresh Cycles :
- 8192
- Voltage - Supply :
- 1.7V~1.9V
- Datasheets
- IS43DR16160A-3DBL
Memory Integrated Silicon Solution, Inc. (ISSI) IS43DR16160A-3DBL Overview
The IS43DR16160A-3DBL by Integrated Silicon Solution, Inc. (ISSI) represents a cutting-edge solution in the domain of Memory technology. This 256Mbit DRAM IC offers exceptional performance with its parallel interface, encapsulated within a compact 84TWBGA package. Designed for applications requiring high-speed data processing and substantial memory capacity, the Memory Integrated Silicon Solution, Inc. (ISSI) IS43DR16160A-3DBL is an ideal choice for manufacturers seeking reliable and efficient memory components that cater to advanced computing needs.
IS43DR16160A-3DBL Features
The IS43DR16160A-3DBL DRAM IC is equipped with several features that make it highly beneficial for a wide range of technological applications. Its key features include a large memory capacity of 256Mbit, which is essential for data-intensive applications. The device operates with a parallel interface, ensuring rapid data transfer rates that enhance overall system performance. Furthermore, its compact 84TWBGA package allows for efficient use of PCB space, making it suitable for dense circuit designs.
IS43DR16160A-3DBL Applications
- Automotive Infotainment Systems: Utilizes its high memory capacity for smooth processing and storage of multimedia content.
- Telecommunication Equipment: Supports high-speed operations in telecom infrastructures, aiding in efficient data handling and storage.
- Consumer Electronics: Ideal for use in devices such as digital TVs and gaming consoles, where large memory and fast access are critical.
- Industrial Automation: Enhances the reliability and speed of automation systems in industrial settings through its robust memory capabilities.
- Medical Devices: Supports advanced medical imaging systems by providing the necessary memory bandwidth and storage for complex computations.
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