IS43DR16160A-3DBI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Write Cycle Time - Word, Page :

15ns

Number of Functions :

1

Height Seated (Max) :

1.2mm

I/O Type :

COMMON

RoHS Status :

Non-RoHS Compliant

Additional Feature :

AUTO/SELF REFRESH

Memory Type :

Volatile

Operating Mode :

SYNCHRONOUS

ECCN Code :

EAR99

Memory Width :

16

Qualification Status :

Not Qualified

Density :

256 Mb

Reach Compliance Code :

not_compliant

Address Bus Width :

15b

Supply Voltage-Max (Vsup) :

1.9V

Operating Supply Voltage :

1.8V

Supply Voltage-Min (Vsup) :

1.7V

Interleaved Burst Length :

48

Supply Voltage :

1.8V

Memory Size :

256Mb 16M x 16

Pbfree Code :

No

Terminal Position :

BOTTOM

Terminal Finish :

Tin/Lead (Sn/Pb)

Package / Case :

84-TFBGA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

12.5mm

Number of Pins :

84

Data Bus Width :

16b

Operating Temperature :

-40°C~85°C TA

Number of Ports :

1

Refresh Cycles :

8192

Terminal Pitch :

0.8mm

Access Time :

450ps

Voltage - Supply :

1.7V~1.9V

Packaging :

Tray

Organization :

16MX16

Mount :

Surface Mount

Number of Terminations :

84

Pin Count :

84

HTS Code :

8542.32.00.24

Mounting Type :

Surface Mount

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Memory Interface :

Parallel

Nominal Supply Current :

330mA

Memory Format :

DRAM

Clock Frequency :

333MHz

Output Characteristics :

3-STATE

Sequential Burst Length :

48

Standby Current-Max :

0.005A