IS43DR16128C-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Power Supplies :

1.8V

Supply Current-Max :

0.485mA

Clock Frequency :

333MHz

Write Cycle Time - Word, Page :

15ns

Width :

8mm

Standby Current-Max :

0.03A

Memory Format :

DRAM

Memory Density :

2147483648 bit

Terminal Pitch :

0.8mm

Supply Voltage-Max (Vsup) :

1.9V

Interleaved Burst Length :

48

Additional Feature :

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

Factory Lead Time :

8 Weeks

Memory Type :

Volatile

Qualification Status :

Not Qualified

Supply Voltage :

1.8V

Terminal Position :

BOTTOM

Sequential Burst Length :

48

JESD-30 Code :

R-PBGA-B84

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

I/O Type :

COMMON

Organization :

128MX16

Package / Case :

84-TFBGA

Access Time :

450ps

Packaging :

Tray

Number of Functions :

1

Surface Mount :

yes

Height Seated (Max) :

1.2mm

Refresh Cycles :

8192

Operating Mode :

SYNCHRONOUS

Memory Width :

16

Length :

12.5mm

Mounting Type :

Surface Mount

Number of Ports :

1

Number of Terminations :

84

Supply Voltage-Min (Vsup) :

1.7V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-40°C~85°C TA

Memory Interface :

Parallel

Voltage - Supply :

1.7V~1.9V

Memory Size :

2Gb 128M x 16

Output Characteristics :

3-STATE

ECCN Code :

EAR99