IS42S81600E-6TL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Refresh Cycles :

4096

Access Time :

5.4ns

RoHS Status :

RoHS Compliant

Data Bus Width :

8B

Output Characteristics :

3-STATE

Terminal Finish :

Matte Tin (Sn) - annealed

Density :

128 Mb

Supply Voltage :

3.3V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Address Bus Width :

14b

Memory Size :

128Mb 16M x 8

Additional Feature :

AUTO/SELF REFRESH

Length :

22.22mm

I/O Type :

COMMON

Sequential Burst Length :

1248FP

Nominal Supply Current :

150mA

Memory Format :

DRAM

Pin Count :

54

Supply Voltage-Min (Vsup) :

3V

Number of Pins :

54

Number of Terminations :

54

Number of Functions :

1

Organization :

16MX8

Terminal Pitch :

0.8mm

Clock Frequency :

166MHz

Interleaved Burst Length :

1248

Height Seated (Max) :

1.2mm

Voltage - Supply :

3V~3.6V

ECCN Code :

EAR99

Memory Interface :

Parallel

Terminal Position :

Dual

Number of Ports :

1

Operating Temperature :

0°C~70°C TA

Memory Type :

Volatile

Pbfree Code :

yes

JESD-609 Code :

e3

Operating Supply Voltage :

3.3V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Operating Mode :

SYNCHRONOUS

Memory Width :

8

Time@Peak Reflow Temperature-Max (s) :

10

Qualification Status :

Not Qualified

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Standby Current-Max :

0.002A

Supply Voltage-Max (Vsup) :

3.6V

Packaging :

Tray

Mounting Type :

Surface Mount