IS42RM16160D-7BLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Position :

BOTTOM

Terminal Pitch :

0.8mm

Supply Voltage :

2.5V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Number of Ports :

1

Number of Functions :

1

Access Time :

5.4ns

Length :

13mm

Density :

256 Mb

Output Characteristics :

3-STATE

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

2.7V

Mount :

Surface Mount

Operating Supply Voltage :

2.5V

Memory Format :

DRAM

Pbfree Code :

yes

Memory Interface :

Parallel

Memory Size :

256Mb 16M x 16

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-609 Code :

e1

Package / Case :

54-TFBGA

ECCN Code :

EAR99

Packaging :

Tray

Nominal Supply Current :

110mA

Height Seated (Max) :

1.2mm

Lead Free :

Lead Free

Interleaved Burst Length :

1248

Data Bus Width :

16b

Voltage - Supply :

2.3V~2.7V

Mounting Type :

Surface Mount

Number of Pins :

54

Sequential Burst Length :

1248FP

Contact Plating :

Copper, Silver, Tin

Max Frequency :

143MHz

Organization :

16MX16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Address Bus Width :

15b

Supply Voltage-Min (Vsup) :

2.3V

Standby Current-Max :

0.001A

I/O Type :

COMMON

Pin Count :

54

Time@Peak Reflow Temperature-Max (s) :

10

Memory Width :

16

Number of Terminations :

54

Refresh Cycles :

8192

Additional Feature :

AUTO/SELF REFRESH

Operating Temperature :

-40°C~85°C TA

Memory Type :

Volatile