IS42S32800D-6BLI
- Mfr.Part #
- IS42S32800D-6BLI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 90-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 90TFBGA
- Stock
- 4,509
- In Stock :
- 4,509
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Terminal Position :
- BOTTOM
- Memory Width :
- 32
- Organization :
- 8MX32
- Length :
- 13mm
- Refresh Cycles :
- 4096
- Access Time :
- 5.4ns
- ECCN Code :
- EAR99
- Voltage - Supply :
- 3V~3.6V
- RoHS Status :
- RoHS Compliant
- Memory Size :
- 256Mb 8M x 32
- Pbfree Code :
- yes
- Pin Count :
- 90
- Operating Temperature :
- -40°C~85°C TA
- Supply Voltage :
- 3.3V
- Mount :
- Surface Mount
- Number of Ports :
- 1
- Nominal Supply Current :
- 180mA
- Height Seated (Max) :
- 1.2mm
- Memory Type :
- Volatile
- Memory Interface :
- Parallel
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- JESD-609 Code :
- e1
- Data Bus Width :
- 32b
- Clock Frequency :
- 166MHz
- Peak Reflow Temperature (Cel) :
- 260
- Standby Current-Max :
- 0.003A
- Terminal Pitch :
- 0.8mm
- I/O Type :
- COMMON
- Supply Voltage-Max (Vsup) :
- 3.6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Copper, Silver, Tin
- Interleaved Burst Length :
- 1248
- Sequential Burst Length :
- 1248FP
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Number of Pins :
- 90
- Package / Case :
- 90-TFBGA
- Packaging :
- Tray
- Address Bus Width :
- 13b
- Additional Feature :
- AUTO/SELF REFRESH
- Supply Voltage-Min (Vsup) :
- 3V
- Number of Functions :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- HTS Code :
- 8542.32.00.24
- Memory Format :
- DRAM
- Number of Terminations :
- 90
- Density :
- 256 Mb
- Operating Supply Voltage :
- 3.3V
- Datasheets
- IS42S32800D-6BLI
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32800D-6BLI Overview
Introducing the IS42S32800D-6BLI, a high-performance DRAM offered by Integrated Silicon Solution, Inc. (ISSI), tailored for applications demanding substantial memory capacity and data throughput. This 256Mbit DRAM utilizes a parallel interface encapsulated in a compact 90TFBGA package, making it an ideal solution for advanced computing systems requiring high-speed data processing and significant storage capacity. The Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32800D-6BLI is designed to meet the rigorous demands of contemporary digital applications, ensuring reliability and performance.
IS42S32800D-6BLI Features
The IS42S32800D-6BLI DRAM chip boasts several key features that make it a top choice for designers and engineers. These include a substantial 256Mbit storage capacity, high-speed parallel interface, and a highly efficient 90TFBGA package that ensures reduced footprint on system boards. The product's robust design also provides enhanced durability and reliability in a variety of operating conditions, making it highly suitable for intensive computational tasks.
IS42S32800D-6BLI Applications
- Automotive Infotainment Systems: Utilized in managing vast amounts of data required for multimedia processing and navigation in modern vehicles.
- Telecommunication Infrastructure: Supports the intensive processing needs of telecommunications equipment, including switches and routers that require high-speed memory for buffer and data packet storage.
- Home Entertainment Systems: Employs in smart TVs and gaming consoles where large memory capacity is critical for user interface responsiveness and multimedia performance.
- Industrial Automation: Applied in control systems that require quick access to data for real-time processing and operational efficiency.
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