IS42S32800B-6B

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Voltage - Supply :

3V~3.6V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

13mm

Operating Mode :

SYNCHRONOUS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

I/O Type :

COMMON

ECCN Code :

EAR99

Supply Voltage-Min (Vsup) :

3V

RoHS Status :

Non-RoHS Compliant

Terminal Position :

BOTTOM

Number of Terminations :

90

Refresh Cycles :

4096

Supply Voltage-Max (Vsup) :

3.6V

Power Supplies :

3.3V

Height Seated (Max) :

1.45mm

Operating Temperature :

0°C~70°C TA

Memory Type :

Volatile

JESD-609 Code :

e0

HTS Code :

8542.32.00.24

Memory Size :

256Mb 8M x 32

Interleaved Burst Length :

1248

Additional Feature :

AUTO/SELF REFRESH

Memory Width :

32

Data Bus Width :

32b

Clock Frequency :

166MHz

Terminal Pitch :

0.8mm

Access Time :

5.5ns

Number of Ports :

1

Sequential Burst Length :

1248FP

Pin Count :

90

Organization :

8MX32

Terminal Finish :

Tin/Lead (Sn/Pb)

Packaging :

Tray

Qualification Status :

Not Qualified

Standby Current-Max :

0.002A

Memory Interface :

Parallel

Memory Format :

DRAM

Package / Case :

90-TFBGA

Mounting Type :

Surface Mount

Number of Functions :

1

Number of Pins :

90

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Reach Compliance Code :

not_compliant

Memory Density :

268435456 bit

Surface Mount :

yes

Supply Current-Max :

0.3mA

Supply Voltage :

3.3V