IS42S32400F-7B

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

JESD-609 Code :

e1

I/O Type :

COMMON

Access Mode :

FOUR BANK PAGE BURST

Memory Format :

DRAM

Memory Type :

Volatile

Additional Feature :

AUTO/SELF REFRESH

ECCN Code :

EAR99

Package / Case :

90-TFBGA

Terminal Position :

BOTTOM

JESD-30 Code :

R-PBGA-B90

HTS Code :

8542.32.00.02

Organization :

4MX32

Power Supplies :

3.3V

Length :

13mm

Supply Voltage-Min (Vsup) :

3V

Interleaved Burst Length :

1248

Height Seated (Max) :

1.2mm

Memory Interface :

Parallel

Memory Size :

128Mb 4M x 32

Standby Current-Max :

0.002A

Voltage - Supply :

3V~3.6V

Supply Voltage-Max (Vsup) :

3.6V

Number of Terminations :

90

Packaging :

Tray

Terminal Pitch :

0.8mm

Output Characteristics :

3-STATE

Sequential Burst Length :

1248FP

Supply Current-Max :

0.16mA

Number of Ports :

1

Refresh Cycles :

4096

Memory Width :

32

Supply Voltage :

3.3V

Surface Mount :

yes

Operating Temperature :

0°C~70°C TA

Pin Count :

90

Clock Frequency :

143MHz

Mounting Type :

Surface Mount

Operating Mode :

SYNCHRONOUS

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Qualification Status :

Not Qualified

Width :

8mm

RoHS Status :

ROHS3 Compliant

Memory Density :

134217728 bit

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Functions :

1

Access Time (Max) :

5.4 ns