IS42S32200E-6BLI
- Mfr.Part #
- IS42S32200E-6BLI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 90-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 64MBIT PARALLEL 90TFBGA
- Stock
- 1,159
- In Stock :
- 1,159
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Number of Terminations :
- 90
- Package / Case :
- 90-TFBGA
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Memory Format :
- DRAM
- Address Bus Width :
- 13b
- Memory Type :
- Volatile
- Packaging :
- Tray
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Memory Size :
- 64Mb 2M x 32
- Radiation Hardening :
- No
- I/O Type :
- COMMON
- Interleaved Burst Length :
- 1248
- Number of Ports :
- 1
- JESD-609 Code :
- e1
- Voltage - Supply :
- 3V~3.6V
- Peak Reflow Temperature (Cel) :
- 260
- Standby Current-Max :
- 0.002A
- ECCN Code :
- EAR99
- Memory Interface :
- Parallel
- Access Time :
- 5.5ns
- Supply Voltage :
- 3.3V
- Operating Temperature :
- -40°C~85°C TA
- RoHS Status :
- RoHS Compliant
- Density :
- 64 Mb
- Additional Feature :
- AUTO/SELF REFRESH
- Terminal Pitch :
- 0.8mm
- Nominal Supply Current :
- 160mA
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Pin Count :
- 90
- Organization :
- 2MX32
- Mount :
- Surface Mount
- Number of Functions :
- 1
- Data Bus Width :
- 32b
- Supply Voltage-Max (Vsup) :
- 3.6V
- Memory Width :
- 32
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Output Characteristics :
- 3-STATE
- Supply Voltage-Min (Vsup) :
- 3V
- Sequential Burst Length :
- 1248FP
- Refresh Cycles :
- 4096
- Clock Frequency :
- 166MHz
- Length :
- 13mm
- Number of Pins :
- 90
- Operating Supply Voltage :
- 3.3V
- HTS Code :
- 8542.32.00.02
- Height Seated (Max) :
- 1.2mm
- Datasheets
- IS42S32200E-6BLI
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32200E-6BLI Overview
The IS42S32200E-6BLI, manufactured by Integrated Silicon Solution, Inc. (ISSI), is a high-performance 64Mbit DRAM integrated circuit, providing reliable and rapid memory solutions for sophisticated electronics systems. Engineered in a compact 90TFBGA package, this DRAM module excels in delivering efficient parallel data processing capabilities, making it an ideal choice for applications demanding high-speed memory operations and minimal power consumption. The Memory Integrated Silicon Solution, Inc. (ISSI) IS42S32200E-6BLI enhances system reliability with its advanced design tailored to meet the rigorous demands of modern electronic environments.
IS42S32200E-6BLI Features
This 64Mbit DRAM features a parallel interface that ensures high-speed data access and swift throughput for processing tasks. The compact 90TFBGA packaging not only saves space but also offers improved thermal characteristics that enhance the overall durability and reliability of the device. Additionally, the IS42S32200E-6BLI operates at a nominal power supply voltage, making it suitable for energy-sensitive applications without sacrificing performance.
IS42S32200E-6BLI Applications
- Consumer Electronics: Utilized in devices such as digital cameras and audio players, where its high-speed memory access improves device responsiveness and efficiency.
- Computing Devices: Integral for boosting the performance of PCs and servers, especially in handling large volumes of data and multitasking environments.
- Communication Equipment: Essential in telecommunications infrastructure, where fast and reliable memory is crucial for the rapid transmission and processing of information.
- Automotive Electronics: Used in advanced driver-assistance systems (ADAS) to process real-time data for safety features such as collision avoidance systems and automatic braking.
- Industrial Systems: Applied in control systems for automation and real-time operational management, enhancing efficiency and reliability.
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