IS42S16160D-75ETLI
- Mfr.Part #
- IS42S16160D-75ETLI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PAR 54TSOP II
- Stock
- 38,931
- In Stock :
- 38,931
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Pitch :
- 0.8mm
- Number of Pins :
- 54
- Memory Type :
- Volatile
- Sequential Burst Length :
- 1248FP
- Length :
- 22.22mm
- Data Bus Width :
- 16b
- Operating Supply Voltage :
- 3.3V
- Refresh Cycles :
- 8192
- Standby Current-Max :
- 0.003A
- Voltage - Supply :
- 3V~3.6V
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Memory Width :
- 16
- Access Time :
- 5.5ns
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Mounting Type :
- Surface Mount
- Output Characteristics :
- 3-STATE
- Packaging :
- Tray
- Additional Feature :
- AUTO/SELF REFRESH
- Number of Ports :
- 1
- Operating Temperature :
- -40°C~85°C TA
- Memory Format :
- DRAM
- RoHS Status :
- RoHS Compliant
- Organization :
- 16MX16
- Pin Count :
- 54
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Supply Voltage-Max (Vsup) :
- 3.6V
- Supply Voltage-Min (Vsup) :
- 3V
- Number of Functions :
- 1
- Nominal Supply Current :
- 180mA
- Package / Case :
- 54-TSOP (0.400, 10.16mm Width)
- Interleaved Burst Length :
- 1248
- Peak Reflow Temperature (Cel) :
- 260
- Height Seated (Max) :
- 1.2mm
- Clock Frequency :
- 133MHz
- Radiation Hardening :
- No
- Supply Voltage :
- 3.3V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Memory Interface :
- Parallel
- I/O Type :
- COMMON
- Number of Terminations :
- 54
- Address Bus Width :
- 15b
- Memory Size :
- 256Mb 16M x 16
- Density :
- 256 Mb
- Datasheets
- IS42S16160D-75ETLI
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16160D-75ETLI Overview
The Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16160D-75ETLI is a high-performance IC DRAM designed for applications demanding substantial memory in a compact form factor. This 256Mbit DRAM offers robust reliability and superior speed, encapsulated in a 54-pin TSOP II package that ensures compatibility with a wide range of modern electronic devices. The utilization of advanced silicon technology by ISSI makes this memory module an ideal solution for handling complex processes in various electronic systems, helping B2B customers enhance their products with a reliable memory resource that significantly boosts operational efficiency.
IS42S16160D-75ETLI Features
The IS42S16160D-75ETLI DRAM from ISSI features a dense 256 Mbit storage capacity, suitable for rigorous data management tasks. Operating at a speed grade of -75, this memory component delivers high-speed data transfer, which is crucial for applications requiring fast access to large volumes of data. Its TSOP II package is designed for easy PCB mounting and is favored for its minimal footprint on system boards, making it an excellent choice for systems where space is at a premium.
IS42S16160D-75ETLI Applications
- Consumer Electronics: Used in devices such as smartphones, tablets, and gaming consoles to manage processes and store data efficiently, ensuring smooth user experiences.
- Networking Equipment: Employs in routers and switches, where large buffer sizes are necessary to handle high-speed internet data transfers and connectivity tasks.
- Automotive Systems: Integrated into automotive infotainment systems to provide reliable performance in managing in-vehicle communications and multimedia processing.
- Industrial Automation: Crucial for use in automated machinery and robots, supporting complex algorithm processing and real-time data handling in industrial settings.
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