IS42S16160D-75ETL
- Mfr.Part #
- IS42S16160D-75ETL
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PAR 54TSOP II
- Stock
- 47,713
- In Stock :
- 47,713
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Number of Functions :
- 1
- Clock Frequency :
- 133MHz
- Memory Format :
- DRAM
- Additional Feature :
- AUTO/SELF REFRESH
- Access Time :
- 5.5ns
- Pin Count :
- 54
- Density :
- 256 Mb
- Qualification Status :
- Not Qualified
- Height Seated (Max) :
- 1.2mm
- Number of Terminations :
- 54
- Interleaved Burst Length :
- 1248
- Operating Temperature :
- 0°C~70°C TA
- ECCN Code :
- EAR99
- Address Bus Width :
- 15b
- Number of Pins :
- 54
- Sequential Burst Length :
- 1248FP
- I/O Type :
- COMMON
- Pbfree Code :
- yes
- Supply Voltage :
- 3.3V
- Data Bus Width :
- 16b
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Refresh Cycles :
- 8192
- Supply Voltage-Max (Vsup) :
- 3.6V
- JESD-609 Code :
- e3
- Package / Case :
- 54-TSOP (0.400, 10.16mm Width)
- Standby Current-Max :
- 0.003A
- Terminal Position :
- Dual
- Nominal Supply Current :
- 180mA
- RoHS Status :
- RoHS Compliant
- Memory Type :
- Volatile
- Length :
- 22.22mm
- Memory Width :
- 16
- Supply Voltage-Min (Vsup) :
- 3V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Output Characteristics :
- 3-STATE
- Operating Supply Voltage :
- 3.3V
- Terminal Pitch :
- 0.8mm
- Voltage - Supply :
- 3V~3.6V
- Number of Ports :
- 1
- Mount :
- Surface Mount
- Organization :
- 16MX16
- Memory Interface :
- Parallel
- Operating Mode :
- SYNCHRONOUS
- Packaging :
- Tray
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Memory Size :
- 256Mb 16M x 16
- Datasheets
- IS42S16160D-75ETL
Memory Integrated Silicon Solution, Inc. IS42S16160D-75ETL Overview
The IS42S16160D-75ETL from Integrated Silicon Solution, Inc. (ISSI) is a high-performance DRAM chip that excels in delivering exceptional memory solutions. Designed with precision, this 256Mbit DRAM is packaged in a compact 54-pin TSOP II format, which makes it ideal for applications requiring high density and small form factor memory. As a Memory Integrated Silicon Solution, Inc. IS42S16160D-75ETL product, it provides reliable and durable performance, crucial for industrial applications and complex digital systems. Its efficient parallel interface ensures rapid access and smooth data flow, making it highly suitable for high-speed computing environments.
IS42S16160D-75ETL Features
This DRAM module offers several features that make it stand out in the competitive memory market:
- High Capacity: With a total memory of 256Mbit, it can handle extensive data requirements, making it ideal for advanced computing systems.
- Parallel Interface: Ensures quick and efficient communication with the CPU, allowing for faster data processing and reduced latency.
- Compact Size: The 54-pin TSOP II package is space-efficient, which is critical in applications where board space is at a premium.
- Wide Temperature Range: Operates reliably across a broad range of temperatures, ensuring performance stability in diverse operating conditions.
IS42S16160D-75ETL Applications
- Embedded Systems: Utilized in microcontroller-based platforms where space and power efficiency are paramount.
- Telecommunication Equipment: Provides the necessary data buffering in routers and switches, facilitating enhanced network performance.
- Automotive Electronics: Suitable for use in advanced automotive systems, contributing to the handling of complex processes and real-time data management.
- Industrial Automation: Helps in managing operational data and machine control algorithms in automated production lines.
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