IRLW610ATM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V

Power Dissipation-Max :

3.1W Ta 33W Tc

Published :

1999

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 1.65A, 5V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

200V

Vgs(th) (Max) @ Id :

2V @ 250μA

Supplier Device Package :

I2PAK (TO-262)

Vgs (Max) :

±20V

Mounting Type :

Through Hole