IRLW510ATM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.8W Ta 37W Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Published :

1999

Current - Continuous Drain (Id) @ 25°C :

5.6A Tc

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 5V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

440mOhm @ 2.8A, 5V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain to Source Voltage (Vdss) :

100V

Supplier Device Package :

I2PAK (TO-262)

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V