IRLTS6342TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Mounting Type :

Surface Mount

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Resistance :

17.5mOhm

Recovery Time :

20 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Height :

1.3mm

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-23-6

Width :

1.75mm

Element Configuration :

Single

Radiation Hardening :

No

Turn-Off Delay Time :

32 ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

8.3A

Power Dissipation-Max :

2W Ta

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Terminal Form :

Gull wing

Fall Time (Typ) :

15 ns

Rise Time :

11ns

Length :

3mm

Turn On Delay Time :

5.4 ns

Lead Free :

Lead Free

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 25V

Number of Elements :

1

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 8.3A, 4.5V

Vgs (Max) :

±12V

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Nominal Vgs :

-400 mV

Power Dissipation :

2W

Published :

2011

Number of Pins :

6

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Transistor Element Material :

SILICON