IRLTS2242TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

905pF @ 10V

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Threshold Voltage :

-400mV

Number of Elements :

1

Element Configuration :

Single

Height :

1.3mm

Lead Free :

Lead Free

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

-20V

Terminal Form :

Gull wing

Vgs (Max) :

±12V

Published :

2009

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2W

Radiation Hardening :

No

Package / Case :

SOT-23-6

Drain to Source Voltage (Vdss) :

20V

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

5.8 ns

Rds On (Max) @ Id, Vgs :

32m Ω @ 6.9A, 4.5V

Pulsed Drain Current-Max (IDM) :

55A

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Number of Pins :

6

Number of Terminations :

6

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

6.9A

Gate to Source Voltage (Vgs) :

12V

Fall Time (Typ) :

68 ns

Rise Time :

18ns

Length :

3mm

Width :

1.75mm

Current - Continuous Drain (Id) @ 25°C :

6.9A Ta

Series :

HEXFET®

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Turn-Off Delay Time :

18 ns

Power Dissipation-Max :

2W Ta

Mount :

Surface Mount

FET Type :

P-Channel

Resistance :

55mOhm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V