IRL3803STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.006Ohm

Terminal Position :

Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Avalanche Energy Rating (Eas) :

610 mJ

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

140A

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

470A

Rds On (Max) @ Id, Vgs :

6m Ω @ 71A, 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Published :

2002

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

3.8W Ta 200W Tc

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

JESD-609 Code :

e3

Vgs (Max) :

±16V

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V