IRL3102

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.013Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 4.5V

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Avalanche Energy Rating (Eas) :

220 mJ

Pulsed Drain Current-Max (IDM) :

240A

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

61A

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

Non-RoHS Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Terminations :

3

Power Dissipation-Max :

89W Tc

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

FET Type :

N-Channel

Published :

1997

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

13m Ω @ 37A, 7V

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Terminal Position :

Single

Package / Case :

TO-220-3

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Number of Elements :

1

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

700mV @ 250μA

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±10V

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 15V