IRL3803SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Packaging :

Tube

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form :

Gull wing

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

470A

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Terminal Position :

Single

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±16V

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.006Ohm

Mounting Type :

Surface Mount

Surface Mount :

yes

Published :

2002

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

610 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

3.8W Ta 200W Tc

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On (Max) @ Id, Vgs :

6m Ω @ 71A, 10V

Drain Current-Max (Abs) (ID) :

140A