IRL3803PBF
- Mfr.Part #
- IRL3803PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 140A TO220AB
- Stock
- 16,985
- In Stock :
- 16,985
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 140A
- Pulsed Drain Current-Max (IDM) :
- 470A
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 4.69mm
- Transistor Element Material :
- SILICON
- Height :
- 8.77mm
- Power Dissipation-Max :
- 200W Tc
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 14 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 4.5V
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Rise Time :
- 230ns
- Nominal Vgs :
- 1 V
- Number of Elements :
- 1
- Series :
- HEXFET®
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 29 ns
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 71A, 10V
- Length :
- 10.5156mm
- FET Type :
- N-Channel
- Threshold Voltage :
- 1V
- Lead Pitch :
- 2.54mm
- Resistance :
- 6mOhm
- Published :
- 2001
- Input Capacitance (Ciss) (Max) @ Vds :
- 5000pF @ 25V
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Vgs (Max) :
- ±16V
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- ECCN Code :
- EAR99
- Factory Lead Time :
- 12 Weeks
- Recovery Time :
- 180 ns
- Number of Pins :
- 3
- Lead Free :
- Contains Lead, Lead Free
- Current Rating :
- 140A
- Termination :
- Through Hole
- Power Dissipation :
- 150W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 35 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Voltage - Rated DC :
- 30V
- Package / Case :
- TO-220-3
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Gate to Source Voltage (Vgs) :
- 16V
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Dual Supply Voltage :
- 30V
- Datasheets
- IRL3803PBF

N-Channel Tube 6m Ω @ 71A, 10V ±16V 5000pF @ 25V 140nC @ 4.5V TO-220-3
IRL3803PBF Description
The fifth generation HEXFET adopts advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with extremely efficient and reliable devices for a variety of applications. TO-220 packaging is generally suitable for all commercial and industrial applications with a power consumption of about 50 watts. TO-220 is widely accepted by the whole industry because of its low thermal resistance and low packaging cost.
IRL3803PBF Features
· Logic - Level Gate Drive
· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Lead-Free
IRL3803PBF Applications
provides designers with extremely efficient and reliable devices for a variety of applications.
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