IRL3716LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

210W

Drain to Source Voltage (Vdss) :

20V

Series :

HEXFET®

Rise Time :

140ns

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Drain to Source Resistance :

4.8mOhm

Rds On (Max) @ Id, Vgs :

4mOhm @ 90A, 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

20V

Mounting Type :

Through Hole

Current Rating :

180A

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 4.5V

Voltage - Rated DC :

20V

Continuous Drain Current (ID) :

180A

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

RoHS Compliant

Supplier Device Package :

TO-262

Power Dissipation-Max :

210W Tc

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Published :

2004

Element Configuration :

Single

Rds On Max :

4 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance :

5.09nF

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

36 ns

Lead Free :

Lead Free

Max Operating Temperature :

175°C

Input Capacitance (Ciss) (Max) @ Vds :

5090pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Turn-Off Delay Time :

38 ns