IRL3715ZSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

50A

Turn On Delay Time :

7.1 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

870pF

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Rds On Max :

11 mΩ

Rds On (Max) @ Id, Vgs :

11mOhm @ 15A, 10V

Packaging :

Tube

Fall Time (Typ) :

4.6 ns

Current Rating :

50A

Voltage - Rated DC :

20V

Drain to Source Breakdown Voltage :

20V

REACH SVHC :

No SVHC

Height :

4.699mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

2.1V

Recovery Time :

14 ns

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

45W

Width :

9.65mm

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Length :

10.668mm

Mounting Type :

Surface Mount

Published :

2004

Power Dissipation-Max :

45W Tc

Series :

HEXFET®

Rise Time :

44ns

Number of Pins :

3

Supplier Device Package :

D2PAK

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Turn-Off Delay Time :

11 ns

Vgs (Max) :

±20V

Mount :

Surface Mount

FET Type :

N-Channel

Element Configuration :

Single

Drain to Source Resistance :

11mOhm

Drain to Source Voltage (Vdss) :

20V

Lead Free :

Lead Free

Max Operating Temperature :

175°C