IRL3715ZLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Drain to Source Resistance :

11mOhm

Min Operating Temperature :

-55°C

Current Rating :

50A

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

7.1 ns

Rds On Max :

11 mΩ

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 10V

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Published :

2004

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rise Time :

44ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

9.65mm

Input Capacitance :

870pF

Vgs(th) (Max) @ Id :

2.55V @ 250µA

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Power Dissipation :

45W

Supplier Device Package :

TO-262

Rds On (Max) @ Id, Vgs :

11mOhm @ 15A, 10V

Length :

10.668mm

Mount :

Through Hole

Continuous Drain Current (ID) :

50A

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

175°C

Power Dissipation-Max :

45W Tc

Voltage - Rated DC :

20V

Element Configuration :

Single

Lead Free :

Lead Free

Fall Time (Typ) :

4.6 ns

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

4.826mm

Vgs (Max) :

±20V

Turn-Off Delay Time :

11 ns