IRL3715PBF
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- Mfr.Part #
- IRL3715PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 54A TO220AB
- Stock
- 11,672
- In Stock ：
- 11,672
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Power Dissipation-Max :
- 3.8W Ta 71W Tc
- Drain to Source Breakdown Voltage :
- 20V
- Drain to Source Voltage (Vdss) :
- 20V
- Voltage - Rated DC :
- 20V
- Rise Time :
- 73ns
- Drain to Source Resistance :
- 20mOhm
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 71W
- Rds On Max :
- 14 mΩ
- Rds On (Max) @ Id, Vgs :
- 14mOhm @ 26A, 10V
- Package / Case :
- TO-220-3
- Number of Pins :
- 3
- Input Capacitance :
- 1.06nF
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Current Rating :
- 54A
- FET Type :
- N-Channel
- Series :
- HEXFET®
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 175°C
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1060pF @ 10V
- Published :
- 2004
- Current - Continuous Drain (Id) @ 25°C :
- 54A Tc
- Continuous Drain Current (ID) :
- 54A
- Supplier Device Package :
- TO-220AB
- RoHS Status :
- RoHS Compliant
- Datasheets
- IRL3715PBF
N-Channel Tube 14mOhm @ 26A, 10V ±20V 1060pF @ 10V 17nC @ 4.5V 20V TO-220-3
IRL3715PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1060pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 54A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 20mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRL3715PBF Features
a continuous drain current (ID) of 54A
a drain-to-source breakdown voltage of 20V voltage
single MOSFETs transistor is 20mOhm
a 20V drain to source voltage (Vdss)
IRL3715PBF Applications
There are a lot of Infineon Technologies
IRL3715PBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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