IRL3714LPBF
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- Mfr.Part #
- IRL3714LPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 36A TO262
- Stock
- 2,845
- In Stock ：
- 2,845
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 20V
- Voltage - Rated DC :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Published :
- 2004
- Fall Time (Typ) :
- 4.5 ns
- Power Dissipation-Max :
- 47W Tc
- Rise Time :
- 78ns
- Mount :
- Through Hole
- Max Operating Temperature :
- 175°C
- Drain to Source Breakdown Voltage :
- 20V
- Turn-Off Delay Time :
- 10 ns
- Continuous Drain Current (ID) :
- 36A
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Resistance :
- 28mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 18A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 10V
- Packaging :
- Tube
- Input Capacitance :
- 670pF
- Series :
- HEXFET®
- Rds On Max :
- 20 mΩ
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-262
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Current Rating :
- 36A
- Gate Charge (Qg) (Max) @ Vgs :
- 9.7nC @ 4.5V
- Power Dissipation :
- 43W
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheets
- IRL3714LPBF
N-Channel Tube 20mOhm @ 18A, 10V ±20V 670pF @ 10V 9.7nC @ 4.5V 20V TO-262-3 Long Leads, I2Pak, TO-262AA
IRL3714LPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 670pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 10 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 28mOhm.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IRL3714LPBF Features
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 28mOhm
a 20V drain to source voltage (Vdss)
IRL3714LPBF Applications
There are a lot of Infineon Technologies
IRL3714LPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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