IRL3713STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

3m Ω @ 38A, 10V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

75A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

330W Tc

Power Dissipation :

330W

Drain to Source Breakdown Voltage :

30V

Width :

9.65mm

Input Capacitance (Ciss) (Max) @ Vds :

5890pF @ 15V

Turn On Delay Time :

16 ns

Current - Continuous Drain (Id) @ 25°C :

260A Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Published :

2005

Case Connection :

DRAIN

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

ROHS3 Compliant

Height :

4.826mm

Turn-Off Delay Time :

40 ns

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 4.5V

Continuous Drain Current (ID) :

260A

Element Configuration :

Single

Fall Time (Typ) :

57 ns

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Mount :

Surface Mount

Rise Time :

160ns

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

Length :

10.668mm

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V