IRL3713SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Continuous Drain Current (ID) :

260A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

40 ns

Threshold Voltage :

2.5V

Power Dissipation-Max :

330W Tc

Series :

HEXFET®

Height :

4.826mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

5890pF @ 15V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Resistance :

3mOhm

Length :

10.668mm

Transistor Application :

SWITCHING

Packaging :

Tube

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

260A Tc

Nominal Vgs :

2.5 V

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±20V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

75A

Case Connection :

DRAIN

Power Dissipation :

200W

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

3m Ω @ 38A, 10V

Operating Temperature :

-55°C~175°C TJ

Width :

9.65mm

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Dual Supply Voltage :

30V

Terminal Form :

Gull wing

Rise Time :

160ns

Fall Time (Typ) :

57 ns

Number of Pins :

3

Number of Elements :

1

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Turn On Delay Time :

16 ns