IRL3713PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

5890pF @ 15V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

2.5V

Rds On (Max) @ Id, Vgs :

3m Ω @ 38A, 10V

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

260A Tc

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 4.5V

Power Dissipation :

200W

Fall Time (Typ) :

57 ns

Voltage - Rated DC :

30V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

75A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current Rating :

250A

Turn On Delay Time :

16 ns

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Transistor Element Material :

SILICON

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

3mOhm

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Rise Time :

160ns

Radiation Hardening :

No

Mount :

Through Hole

Width :

4.82mm

Turn-Off Delay Time :

40 ns

Packaging :

Tube

Number of Pins :

3

Height :

9.017mm

Case Connection :

DRAIN

Nominal Vgs :

2.5 V

Contact Plating :

Tin

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

260A

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Length :

10.6426mm

Power Dissipation-Max :

330W Tc