IRL3705ZSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

55V

Packaging :

Cut Tape (CT)

Surface Mount :

yes

JESD-609 Code :

e3

Number of Terminations :

2

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

340A

Number of Elements :

1

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Power Dissipation-Max (Abs) :

130W

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Rds On (Max) @ Id, Vgs :

8m Ω @ 52A, 10V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

55V

Drain-source On Resistance-Max :

0.008Ohm

Terminal Position :

Single

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

N-Channel

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

75A

Published :

2006

Avalanche Energy Rating (Eas) :

180 mJ

Operating Temperature (Max) :

175°C