IRL3705ZSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

8mOhm

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Rise Time :

240ns

Current Rating :

86A

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

83 ns

Width :

9.65mm

Power Dissipation-Max :

130W Tc

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Nominal Vgs :

3 V

Voltage - Rated DC :

55V

Gate to Source Voltage (Vgs) :

16V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

10.668mm

Factory Lead Time :

12 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Number of Elements :

1

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Height :

4.826mm

Rds On (Max) @ Id, Vgs :

8m Ω @ 52A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 25V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

130W

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

75A

Drain to Source Breakdown Voltage :

55V

Turn-Off Delay Time :

26 ns

Vgs (Max) :

±16V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Turn On Delay Time :

17 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

55V

Published :

2004

Threshold Voltage :

3V

Recovery Time :

24 ns

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC