IRL3705ZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Power Dissipation-Max :

130W Tc

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

75A

Drain to Source Voltage (Vdss) :

55V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

8m Ω @ 52A, 10V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2006

Number of Elements :

1

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.008Ohm

DS Breakdown Voltage-Min :

55V

Avalanche Energy Rating (Eas) :

180 mJ

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Pulsed Drain Current-Max (IDM) :

340A

Vgs (Max) :

±16V

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HEXFET®

Vgs(th) (Max) @ Id :

3V @ 250µA