IRL3705Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

55V

REACH SVHC :

No SVHC

Rise Time :

240ns

Number of Pins :

3

Resistance :

8mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-220-3

Published :

2004

Drain to Source Resistance :

12mOhm

Length :

10.6426mm

FET Type :

N-Channel

Radiation Hardening :

No

Dual Supply Voltage :

55V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Power Dissipation-Max :

130W Tc

Drain to Source Voltage (Vdss) :

55V

Factory Lead Time :

12 Weeks

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

26 ns

Turn On Delay Time :

17 ns

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 25V

Vgs(th) (Max) @ Id :

3V @ 250µA

Current Rating :

75A

Mount :

Through Hole

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Supplier Device Package :

TO-220AB

Threshold Voltage :

3V

Recovery Time :

24 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±16V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

8mOhm @ 52A, 10V

Fall Time (Typ) :

83 ns

Mounting Type :

Through Hole

Rds On Max :

8 mΩ

Height :

9.017mm

Max Operating Temperature :

175°C

Element Configuration :

Single

Input Capacitance :

2.88nF

Continuous Drain Current (ID) :

75A

Packaging :

Tube

Gate to Source Voltage (Vgs) :

16V

Voltage - Rated DC :

55V

Width :

4.82mm

Nominal Vgs :

3 V

Power Dissipation :

130W