IRL3705NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

89A Tc

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2004

Radiation Hardening :

No

Rise Time :

140ns

Contact Plating :

Tin

Element Configuration :

Single

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±16V

Lead Free :

Contains Lead, Lead Free

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Terminal Form :

Gull wing

Power Dissipation-Max :

3.8W Ta 170W Tc

FET Type :

N-Channel

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

89A

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-609 Code :

e3

Fall Time (Typ) :

78 ns

Rds On (Max) @ Id, Vgs :

10m Ω @ 46A, 10V

Recovery Time :

140 ns

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Gate to Source Voltage (Vgs) :

16V

Height :

4.699mm

Turn On Delay Time :

12 ns

Width :

10.16mm

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Voltage - Rated DC :

55V

Series :

HEXFET®

Threshold Voltage :

2V

Number of Pins :

3

Nominal Vgs :

2 V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Power Dissipation :

170W

Current Rating :

89A

Number of Elements :

1

Resistance :

10MOhm

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Turn-Off Delay Time :

37 ns

Length :

10.668mm

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

55V

Time@Peak Reflow Temperature-Max (s) :

30